Crocus Nano Electronics, LLC (CNE) announced important update on its proprietary STT (Spin Torque Transfer) MRAM technology. According to Product Engineering Director Alexey Khvalkovskiy, CNE has been working on the STT-MRAM development since the beginning of 2016 and the latest test results on 90 nm pMTJ (perpendicular magnetic tunnel junction) wafers demonstrated the technology sufficiency for early commercialization. “We developed unique materials that are able to deliver high data retention, tolerance to external magnetic fields and low switching currents, while the advanced process flow delivers bitwise yield of more than 95%”, Alexey said.
Furthermore, CNE reported completion of design of the STT-MRAM test chip for further technology improvement in cooperation with eVaderis, a French company offering IP solutions based on new, disruptive memory technologies such as MRAM. “We have created a universal memory chip able to serve as a platform for technology development through a wide range of MTJ sizes, currents and voltages ranges driving the cell. Thanks to flexible peripherals, the chip would be used also for qualification of commercial applications” – eVaderis Deputy CEO Virgile Javerliac said.
STT-MRAM technology is a new generation NVM technology considered to be an ideal solution for IoT embedded memories due to its non-volatility, extremely low power consumption, very fast read/write, nearly unlimited endurance and scalability. At the same time, due to almost no degradation in time, negligible leakage currents and thermal stability MRAM technology is perfectly matching the applications with a higher demand in reliability.
“CNE manufacturing capabilities are optimized for MTJ production, thus STT-MRAM is our core technology and we are encouraged by relatively fast and convincing breakthrough in its development. Design of commercial STT-MRAM products will take some time but we have now a clear vision of our next steps and we expect to get first engineering samples out already in 2018” – CNE VP of Business Development Vladimir Krupnik said.
About CNE: CNE is the first Russian foundry dedicated entirely to semiconductor BEOL, working with 300 mm wafers and at 65-90 nm technology nodes. The foundry has been built in Moscow in 2015 and equipped with the advanced tools that are able to process up to 4000 wafers per month. At this point, CNE is mostly an exporting fab, focused on the innovative NVM technologies (MRAM, RRAM) implementation and design of components utilizing these memories; on top of that CNE is working in the fast-emerging domains of microelectronics: magnetic sensors, biochips, planar passive devices and interposers. CNE web-site: www.crocusnano.com
About eVaderis: Founded in 2014, eVaderis is the first company worldwide to offer innovative IP solutions based on new, disruptive embedded memory technologies including MRAM and RRAM. The company provides highly competitive products and design services to meet the challenges of producing advanced non-volatile memories, compilers, logic libraries and processor subsystems, paving the way for new chip design paradigms. eVaderis web-site: www.evaderis.com
Source: Crocus Nano Electronics